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AOK30B60D

TO247PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOK30B60DL

TO247PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AUIRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

AUIRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRGB30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGP30B60KD

NPTIGBT

DESCRIPTION ·LowDiodeVF ·10μsShortCircuitCapability ·UltrasoftDiodeReverseRecoveryCharacteristics APPLICATIONS ·LowEMI ·RuggedTransientPerformance ·BenchmarkEfficiencyforMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRGP30B60KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage Benefits ?BenchmarkEfficiencyforMotorControl

IRF

International Rectifier

IRGP30B60KD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage ?Lead-Free Benefits ?BenchmarkEfficiencyfor

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRGS30B60KTRRP

  • 功能描述:

    IGBT 模塊 600V 30AD2PAK

  • RoHS:

  • 制造商:

    Infineon Technologies

  • 產(chǎn)品:

    IGBT Silicon Modules

  • 配置:

    Dual 集電極—發(fā)射極最大電壓

  • VCEO:

    600 V

  • 集電極—射極飽和電壓:

    1.95 V 在25

  • C的連續(xù)集電極電流:

    230 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    445 W

  • 最大工作溫度:

    + 125 C

  • 封裝/箱體:

    34MM

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
588
只做原廠渠道 可追溯貨源
詢價
IR
23+
TO-263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
詢價
IR
24+
TO-263
35200
一級代理/放心采購
詢價
IR
11+PBF
TO-263
638
現(xiàn)貨
詢價
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
INFINEON
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
23+
D2PAK
10000
公司只做原裝正品
詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
更多IRGS30B60KTRRP供應(yīng)商 更新時間2025-2-28 15:00:00