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IRL2203NPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NPBF

Advanced Process Technology

IRF

International Rectifier

IRL2203NPBF_15

Advanced Process Technology

IRF

International Rectifier

IRL2203NS

PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL2203NSPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NSPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL2203NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203S

PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRLI2203

PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLI2203G

PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLI2203N

HEXFETPowerMOSFET

VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRLI2203NPBF

HEXFETPowerMOSFET

VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

KSR2203

PNP(SWITCHINGAPPLICATION)

SWITCHINGAPPLICATION(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit ?BuiltinbiasResistor(R1=22K?,R2=22K?) ?ComplementtoKSR1203

SamsungSamsung semiconductor

三星三星半導(dǎo)體

LP2203

CITSWITCH

CIT

CIT Relay & Switch

LP2203

200mA,DualChannelUltra-FastCMOSLDORegulator

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

LTC2203

16-Bit,25Msps/10MspsADCs

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2203

16-Bit,20MspsADC

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2203

16-Bit,20MspsSerialLowNoiseDualADC

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IRL2203NPBF

  • 功能描述:

    MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-220
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
詢價(jià)
IR
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì)
詢價(jià)
INFINEON/IR
17+
TO-220-3
1700
詢價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
詢價(jià)
IR進(jìn)口□□□□□
ROHS全新原裝
TO-220
21870
原裝進(jìn)口價(jià)格好實(shí)需詳詢QQ350053121
詢價(jià)
IR
16+
TO-220
6181
全新原裝/深圳現(xiàn)貨庫(kù)2
詢價(jià)
IR
23+
TO-220
65400
詢價(jià)
INFINEON/英飛凌
2021+
TO-220
18454
原裝進(jìn)口假一罰十
詢價(jià)
INFINEON/英飛凌
19+
TO-220
100
進(jìn)口原裝支持含稅
詢價(jià)
更多IRL2203NPBF供應(yīng)商 更新時(shí)間2024-12-24 13:04:00