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IRL2203NPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NPBF

Advanced Process Technology

IRF

International Rectifier

IRL2203NPBF_15

Advanced Process Technology

IRF

International Rectifier

IRL2203NS

PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL2203NSPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NSPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL2203NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203S

PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRL2203NPBF

  • 功能描述：

    MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO-220
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價(jià)格優(yōu)勢(shì)
 詢價(jià)
INFINEON/IR
17+
TO-220-3
1700
詢價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢價(jià)
IR進(jìn)口□□□□□
ROHS全新原裝
TO-220
21870
原裝進(jìn)口價(jià)格好實(shí)需詳詢QQ350053121
 詢價(jià)
IR
16+
TO-220
6181
全新原裝/深圳現(xiàn)貨庫2
 詢價(jià)
IR
23+
TO-220
65400
詢價(jià)
INFINEON/英飛凌
2021+
TO-220
18454
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON/英飛凌
19+
TO-220
100
進(jìn)口原裝支持含稅
 詢價(jià)
更多IRL2203NPBF供應(yīng)商 更新時(shí)間2025-1-23 10:45:00

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