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AUIRGSL30B60K

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

AUIRGSL30B60K

包裝:管件 封裝/外殼:TO-262-3,長引線,I2Pak,TO-262AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 78A 370W TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGP30B60KD

NPTIGBT

DESCRIPTION ·LowDiodeVF ·10μsShortCircuitCapability ·UltrasoftDiodeReverseRecoveryCharacteristics APPLICATIONS ·LowEMI ·RuggedTransientPerformance ·BenchmarkEfficiencyforMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRGP30B60KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage Benefits ?BenchmarkEfficiencyforMotorControl

IRF

International Rectifier

IRGP30B60KD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage ?Lead-Free Benefits ?BenchmarkEfficiencyfor

IRF

International Rectifier

IRGP30B60KD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS30B60

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGS30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRGS30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGSL30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

MBR30B60CTH

PowerSchottkyRectifier-30Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

MBR30B60FCTH

PowerSchottkyRectifier-30Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

QCA30B60

TRANSISTORMODULE

TRANSISTORMODULE QCA30BandQCB30AaredualDarlingtonpowertransistormoduleswhichhaveseries-connectedhighspeed,highpowerDarlingtontransistors.Eachtransistorhasareverseparalleledfastrecoverydiode. ●IC30A,VCEX400/600V ●Lowsaturationvoltageforhigherefficiency. ●Is

SANREX

Sansha Electric Mfg. Co. Ltd.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    AUIRGSL30B60K

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • IGBT 類型:

    NPT

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.35V @ 15V,30A

  • 開關(guān)能量:

    350μJ(開),825μJ(關(guān))

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關(guān))值:

    46ns/185ns

  • 測試條件:

    400V,30A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 175°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-262-3,長引線,I2Pak,TO-262AA

  • 供應(yīng)商器件封裝:

    TO-262

  • 描述:

    IGBT 600V 78A 370W TO262

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon Technologies
23+
TO-262
13000
15年原裝正品企業(yè)
詢價
Infineon
18+
NA
3445
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價
IR
23+
TO-262
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
INFINEON
1809+
TO-262
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
23+
TO262
10000
公司只做原裝正品
詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細信息,
詢價
Infineon Technologies
22+
TO262
9000
原廠渠道,現(xiàn)貨配單
詢價
Infineon Technologies
21+
TO262
13880
公司只售原裝,支持實單
詢價
INFINEON
22+
N/A
2500
進口原裝,優(yōu)勢現(xiàn)貨
詢價
更多AUIRGSL30B60K供應(yīng)商 更新時間2024-12-24 15:00:00