首頁 >IRGS6B60KPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRGS6B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrentSharing | IRF International Rectifier | IRF | |
IRGS6B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrent | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-220isavailableinPbFasaLead-Free Benefits ?BenchmarkEff | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrentSharing | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?R | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrent | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-220isavailableinPbFasaLead-Free Benefits ?BenchmarkEff | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrent | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-220isavailableinPbFasaLead-Free Benefits ?BenchmarkEff | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRGS6B60KPBF
- 功能描述:
IGBT 晶體管 600V ULTRAFAST 10-30 KHZ IGBT
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INFINEON |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Infineon Technologies |
22+ |
D2PAK |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
D2PAK |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Infineon Technologies |
23+ |
D2PAK |
9000 |
原裝正品,支持實單 |
詢價 | ||
INFINEON |
21+ |
N/A |
2500 |
進口原裝,優(yōu)勢現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 |
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