首頁 >IRL1404SPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRL1404SPBF | HEXFET? Power MOSFET Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | |
IRL1404SPBF | Advanced Process Technology | IRF International Rectifier | IRF | |
Advanced Process Technology | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET
| IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AUTOMOTIVEMOSFET
| IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETHEXFET?PowerMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETHEXFET?PowerMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET
| IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETHEXFET?PowerMOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb | IRF International Rectifier | IRF | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
JJW | ||||
SiliconN-ChannelMOSFET ?Lowon-resistance ?Highspeedswitching ?Lowdrivecurrent ?Nosecondarybreakdown ?SuitableforswitchingregulatorandDC-DCconverter | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SPECIFICATIONSFORSAWDUPLEXER(RFDUPLEXERFORCORDLESSPHONECIS) | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
7mmAdjustableshieldedIFTCoil(II) | FRONTIER Frontier Electronics | FRONTIER | ||
7mmADJUSTABLEIFTCOILS(II)(SHIELDED) | FRONTIER Frontier Electronics | FRONTIER |
詳細(xì)參數(shù)
- 型號:
IRL1404SPBF
- 功能描述:
MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
D2-pak |
20000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IR |
24+ |
TO-263 |
501446 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
IR |
1415+ |
TO-263 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價(jià) | ||
IR |
2020+ |
原廠封裝 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價(jià) | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
23+ |
NA |
686 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
22+23+ |
TO-263 |
15686 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
TO-263 |
90000 |
一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢價(jià) |
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