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IRGSL4B60KD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1PBF

包裝:卷帶(TR) 封裝/外殼:TO-262-3,長引線,I2Pak,TO-262AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT NPT 600V 11A TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGB4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

IRGB4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGB4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGS4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

IRGS4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS4B60KD1PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITH

IRF

International Rectifier

IRGSL4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IRGSL4B60KD1PBF

  • 制造商:

    Infineon Technologies

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)

  • IGBT 類型:

    NPT

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    2.5V @ 15V,4A

  • 開關(guān)能量:

    73μJ(開),47μJ(關(guān))

  • 輸入類型:

    標準

  • 25°C 時 Td(開/關(guān))值:

    22ns/100ns

  • 測試條件:

    400V,4A,100 歐姆,15V

  • 工作溫度:

    -55°C ~ 175°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-262-3,長引線,I2Pak,TO-262AA

  • 供應(yīng)商器件封裝:

    TO-262

  • 描述:

    IGBT NPT 600V 11A TO262

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-262-3
346
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
詢價
Infineon
18+
NA
3668
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價
IR
2020+
TO262
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價
IR
2023+
TO262
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
IR
18+
TO262
9862
全新原裝現(xiàn)貨/假一罰百!
詢價
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
INFINEON
1809+
TO-262
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
23+
TO262
10000
公司只做原裝正品
詢價
更多IRGSL4B60KD1PBF供應(yīng)商 更新時間2024-12-24 10:50:00