首頁 >IRGSL4B60KD1PBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRGSL4B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | |
IRGSL4B60KD1PBF | 包裝:卷帶(TR) 封裝/外殼:TO-262-3,長引線,I2Pak,TO-262AA 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT NPT 600V 11A TO262 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITH | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITH | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITH | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerform | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號:
IRGSL4B60KD1PBF
- 制造商:
Infineon Technologies
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
卷帶(TR)
- IGBT 類型:
NPT
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.5V @ 15V,4A
- 開關(guān)能量:
73μJ(開),47μJ(關(guān))
- 輸入類型:
標準
- 25°C 時 Td(開/關(guān))值:
22ns/100ns
- 測試條件:
400V,4A,100 歐姆,15V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-262-3,長引線,I2Pak,TO-262AA
- 供應(yīng)商器件封裝:
TO-262
- 描述:
IGBT NPT 600V 11A TO262
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262-3 |
346 |
詢價 | |||
IR |
23+ |
TO-262 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Infineon |
18+ |
NA |
3668 |
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
IR |
2020+ |
TO262 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
2023+ |
TO262 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
18+ |
TO262 |
9862 |
全新原裝現(xiàn)貨/假一罰百! |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INFINEON |
1809+ |
TO-262 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
23+ |
TO262 |
10000 |
公司只做原裝正品 |
詢價 |
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