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IRGSL10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGSL10B60KDPBF

包裝：卷帶（TR） 封裝/外殼：TO-262-3，長引線，I2Pak，TO-262AA 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT NPT 600V 22A TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AOB10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOK10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOT10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOTF10B60D

AOTF10B60D

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

FCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

FCU10B60

FRD-ForPowerFactorImprovementHighFrequencyRecification

FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

FSF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

FSF10B60B

FRED

NIEC

Nihon Inter Electronics Corporation

FSU10B60

FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

GB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM10B60HA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGB10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGS10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IRGSL10B60KDPBF

  • 制造商：

    Infineon Technologies

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    卷帶（TR）

  • IGBT 類型：

    NPT

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.2V @ 15V，10A

  • 開關(guān)能量：

    140μJ（開），250μJ（關(guān)）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關(guān)）值：

    30ns/230ns

  • 測試條件：

    400V，10A，47 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-262-3，長引線，I2Pak，TO-262AA

  • 供應商器件封裝：

    TO-262

  • 描述：

    IGBT NPT 600V 22A TO262

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-263
200
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價
Infineon
18+
NA
3619
進口原裝正品優(yōu)勢供應QQ3171516190
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON
1809+
TO-262
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
23+
TO-220-3
10000
公司只做原裝正品
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IRGSL10B60KDPBF供應商 更新時間2024-12-24 10:50:00

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