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IXTA180N10T

N-Channel Enhancement Mode Avalanche Rated

TrenchMV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Ultra-lowOnResistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?175°COperatingTemperature Advantages ?Easytomount ?Spacesavings ?High

IXYS

IXYS Corporation

IXTA180N10T

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA180N10T7

PreliminaryTechnical Information TrenchMVTM Power MOSFET

TrenchMV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Ultra-lowOnResistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?175°COperatingTemperature Advantages ?Easytomount ?Spacesavings ?Hig

IXYS

IXYS Corporation

IXTC180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH180N10T

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXTP180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDBA180N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDBA180N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDPL180N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDPL180N10B

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

NDPL180N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDPL180N10BG

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

STE180N10

N-CHANNEL100V-5.5mohm-180A-ISOTOPPOWERMOSFET

■TYPICALRDS(on)=5.5m? ■100AVALANCHETESTED ■LOWINTRINSICCAPACITANCE ■GATECHARGEMINIMIZED ■REDUCEDVOLTAGESPREAD INDUSTRIALAPPLICATIONS: ■SMPS&UPS ■MOTORCONTROL ■WELDINGEQUIPMENT ■OUTPUTSTAGEFORPWM,ULTRASONICCIRCUITS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    IXTA180N10T

  • 功能描述：

    MOSFET 180 Amps 100V 6.1 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-263AA
30000
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23+
TO-263
20437
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Littelfuse/IXYS
23+
TO-263
7828
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INTEGRATECHNOLOGIES
24+
TO-263-3DPak2TO-263A
160554
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IXYS
24+
TO-263
70
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IXYS
23+
TO-263
6000
原裝正品,假一罰十
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IXYS
23+
TO-263-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IXYS
2020+
TO-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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IXYS
1931+
N/A
308
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更多IXTA180N10T供應(yīng)商 更新時間2024-12-25 19:38:00

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