首頁 >IXTH12N100L>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IXTH12N100L | LinearTM Power MOSFET w/ Extended FBSOA Linear?PowerMOSFETw/ExtendedFBSOA N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackage ?DesignedforLinearOperation ?AvalancheRated ?MoldingEpoxyMeetsUL94V-0 FlammabilityClassification Advantages ?EasytoMount ?SpaceSavings ?High | IXYS IXYS Corporation | IXYS | |
IXTH12N100L | isc N-Channel MOSFET Transistor ·FEATURES ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerRFPowerMOSFETs VDSS=1000V ID25=12A RDS(on)≤1.05Ω trr≤250ns N-ChannelEnhancementMode AvalancheRated,LowQg,Low IntrinsicRg,HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?Ruggedpolysilicongatecellstructure ? | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFETs PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ● | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFETsISOPLUS247?F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSw | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247QCLASS HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRated,HighdV/dtLowGateChargeandCapacitances HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號：
IXTH12N100L
- 功能描述：
MOSFET 12 Amps 1000V 1.3 Ohms Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-247(IXTH) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
IXYS |
24+ |
TO-247 |
8866 |
詢價 | |||
IXYS |
18+ |
NA |
3356 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物 |
詢價 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
IXYS |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IXYS |
21+ |
TO2473 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
6000 |
原裝正品，支持實單 |
詢價 |
相關(guān)規(guī)格書
更多- IXTH12N150
- IXTH130N20T
- IXTH140P05T
- IXTH15N50L2
- IXTH16N10D2
- IXTH16N50D2
- IXTH16P60P
- IXTH1N250
- IXTH20N50D
- IXTH20P50P
- IXTH22N50P
- IXTH24N50L
- IXTH26N60P
- IXTH30N50L2
- IXTH30N60L2
- IXTH36N50P
- IXTH3N120
- IXTH40N30
- IXTH44P15T
- IXTH4N150
- IXTH50P085
- IXTH52P10P
- IXTH60N20L2
- IXTH67N10
- IXTH6N120
- IXTH75N10
- IXTH76P10T
- IXTH80N20L
- IXTH8P50
- IXTH96N20P
- IXTI12N50P
- IXTK102N30P
- IXTK120N25P
- IXTK140N30P
- IXTK170P10P
- IXTK180N15P
- IXTK20N150
- IXTK22N100L
- IXTK40P50P
- IXTK5N250
- IXTK60N50L2
- IXTK8N150L
- IXTK90P20P
- IXTN120P20T
- IXTN17N120L
相關(guān)庫存
更多- IXTH130N10T
- IXTH13N110
- IXTH140P10T
- IXTH160N10T
- IXTH16N20D2
- IXTH16P20
- IXTH180N10T
- IXTH200N10T
- IXTH20N60
- IXTH21N50
- IXTH24N50
- IXTH24P20
- IXTH26P20P
- IXTH30N50P
- IXTH30N60P
- IXTH36P15P
- IXTH3N150
- IXTH40N50L2
- IXTH460P2
- IXTH50N20
- IXTH50P10
- IXTH5N100A
- IXTH64N65X
- IXTH6N100D2
- IXTH6N50D2
- IXTH75N10L2
- IXTH7P50
- IXTH88N30P
- IXTH90P10P
- IXTH96P085T
- IXTJ4N150
- IXTK110N20L2
- IXTK120P20T
- IXTK150N15P
- IXTK17N120L
- IXTK200N10L2
- IXTK210P10T
- IXTK32P60P
- IXTK550N055T2
- IXTK600N04T2
- IXTK82N25P
- IXTK90N25L2
- IXTL2N450
- IXTN170P10P
- IXTN200N10L2
