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IXTH10P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

IXTH10P50P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

FLX10P50

HighVoltagePowerSupplies

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

IXTA10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTP10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTQ10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTT10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

TK10P50W

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK10P50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

V10P50P

Reducedfootprintandvolumerequiredforsurgeprotection

Littelfuselittelfuse

力特力特公司

WPP10P50K-F

Film/FoilPolypropyleneCapacitors

CDE

Cornell Dubilier Electronics

WPP10P50K-F

AxialLeadedHighFrequencyPulseCapacitors

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細參數(shù)

  • 型號：

    IXTH10P50

  • 功能描述：

    MOSFET -10 Amps -500V 0.9 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD
137
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-247
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
19+20+
TO-247
1269
全新原裝房間現(xiàn)貨 可長期供貨
 詢價
IXYS/艾賽斯
23+
TO-247
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS/艾賽斯
21+
TO-247
10000
原裝現(xiàn)貨假一罰十
 詢價
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXTH10P50供應(yīng)商 更新時間2024-10-25 15:30:00

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