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IRGS10B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGS10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGS10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGS10B60KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRGSL10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGSL10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

MBR10B60CTH

PowerSchottkyRectifier-10Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導體深圳市矽萊克半導體有限公司

MBR10B60FCTH

PowerSchottkyRectifier-10Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導體深圳市矽萊克半導體有限公司

SBL10B60CTH

PowerSchottkyRectifier-10Amp60Volt

SIRECTSirectifier Global Corp.

矽萊克半導體深圳市矽萊克半導體有限公司

TCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

TCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

TCU10B60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

TSU10B60

FRED

NI

National Instruments Inc.

TSU10B60

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

詳細參數(shù)

  • 型號：

    IRGS10B60KD

  • 功能描述：

    IGBT 晶體管 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INTERNATIONA
05+
原廠原裝
9214
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
24+
D2-Pak
8866
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
 詢價
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
IR
2023+
D2-PAK
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IR
2020+
D2-PAK
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
JD/晶導
23+
SMB(DO-214AA)
69820
終端可以免費供樣,支持BOM配單!
 詢價
IR
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價
更多IRGS10B60KD供應商 更新時間2024-12-24 16:46:00

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