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IRFRU4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??

IRF

International Rectifier

IRFU4105

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??

IRF

International Rectifier

IRFU4105

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU4105PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4105Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4105Z

PowerMOSFET(Vds=55V,Rds(on)=24.5mohm,Id=30A)

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRF

International Rectifier

IRFU4105Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU4105ZPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

IRFU4105ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4105ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFU4105ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

KSMT4105N

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

LC4105V

LevelShifter

Overview TheLC4105Visalevelshifterdriverthatconverts5-Vsignalsintosignalswithamplitudesbetween10and18V. Features ?Seveninputsandelevenoutputs IN1toIN3produceonlytrueoutputs. IN4toIN7producebothtrueandinvertedoutputs. ?SlimSSOP-30package

SANYOSanyo

三洋三洋電機株式會社

LH4105

PRECISIONFASTSETTLINGHIGHCURRENTOPERATIONALAMPLIFIER

NSCNational Semiconductor (TI)

美國國家半導體美國國家半導體公司

LH4105C

PRECISIONFASTSETTLINGHIGHCURRENTOPERATIONALAMPLIFIER

NSCNational Semiconductor (TI)

美國國家半導體美國國家半導體公司

詳細參數(shù)

  • 型號：

    IRFR4105ZTRRPBF

  • 功能描述：

    MOSFET N-CH 55V 30A DPAK

  • RoHS：

    是

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
Infineon Technologies
21+
D-Pak
3000
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
INFINEON
1503+
TO-252
3000
就找我吧!--邀您體驗愉快問購元件!
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Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
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Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
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Infineon Technologies
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實單
 詢價
Infineon Technologies
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品，支持實單
 詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務
 詢價
Infineon Technologies
2022+
TO-252-3,DPak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Infineon Technologies
23+
原裝
8000
只做原裝現(xiàn)貨
 詢價
更多IRFR4105ZTRRPBF供應商 更新時間2024-11-18 10:27:00

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