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IRFRU5305

PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A)

IRF

International Rectifier

IRFU5305

-60VP-ChannelEnhancementModeMOSFET

DESCRIPTION TheIRFU5305usesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFU5305

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU5305

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU5305

PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A)

IRF

International Rectifier

IRFU5305PBF

HEXFET?PowerMOSFET(VDSS=-55V,RDS(on)=0.065廓,ID=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

IRF

International Rectifier

IRFU5305PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFU5305PBF

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU5305PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFU5305PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

KERSEMI

Kersemi Electronic Co., Ltd.

KMB5305

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSC5305

HighVoltageHighSpeedPowerSwitchApplication

HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC5305D

HighVoltageHighSpeedPowerSwitchApplication

HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC5305DFTTU

HighVoltageHighSpeedPowerSwitchApplication

HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSC5305DTU

HighVoltageHighSpeedPowerSwitchApplication

HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSM5305

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU5305

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

M5305

JIGHRELIABILITYCURRENTREGULATORDIODES

HIGHRELIABILITYCURRENTREGULATORDIODES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MADDT5305

TechnicalreferenceACServoMotor&Driver

PANASONICBATTERYPanasonic Battery Group

松下電器松下電器（中國(guó)）有限公司

MBDDT5305

TechnicalreferenceACServoMotor&Driver

PANASONICBATTERYPanasonic Battery Group

松下電器松下電器（中國(guó)）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR5305TRR

  • 功能描述：

    MOSFET P-CH 55V 31A DPAK

  • RoHS：

    否

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
1215+
TO-252
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢價(jià)
IR
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
Infineon Technologies
21+
D-Pak
3000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
INFINEON
1503+
TO-252
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Infineon Technologies
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IR
23+
TO-252
98580
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
Infineon Technologies
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品，支持實(shí)單
 詢價(jià)
infineon
2023+
TO-252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
更多IRFR5305TRR供應(yīng)商 更新時(shí)間2024-11-18 11:04:00

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