首頁>IRFU4105ZPBF>規(guī)格書詳情
IRFU4105ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFU4105ZPBF規(guī)格書詳情
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFU4105ZPBF
- 功能描述：
MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-252-2(DPAK) |
12700 |
買原裝認(rèn)準(zhǔn)中賽美 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-252-2(DPAK) |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon Technologies |
21+ |
TO2513 Short Leads IPak TO251A |
13880 |
公司只售原裝,支持實(shí)單 |
詢價 | ||
IR |
1822+ |
TO-251 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
apec |
2023+ |
TO-251 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
Infineon/英飛凌 |
2023 |
TO-252-2(DPAK) |
6000 |
公司原裝現(xiàn)貨/支持實(shí)單 |
詢價 | ||
IR |
23+ |
I-PAK |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-252-2(DPAK) |
25630 |
原裝正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
6000 |
原裝現(xiàn)貨正品 |
詢價 |
