首頁 >IRFR420ATRLPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR420ATRLPBF | Power MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR420ATRLPBF | Power MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFR420ATRLPBF | Power MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR420ATRLPBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
HEXFETPOWERMOSFET(VDSS=500V,RDS(on)=3.0廓,ID=2.4A) | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DynamicdV/dtRating | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR420,SiHFR420) ?Straightlead(IRFU420,SiHFU420) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DynamicdV/dtRating | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細參數(shù)
- 型號:
IRFR420ATRLPBF
- 功能描述:
MOSFET N-Chan 500V 3.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY |
2020+ |
TO-252 |
9600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
VISHAY/威世 |
24+ |
TO-252 |
17 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
VISHAY/威世 |
22+ |
TO-252 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
VISHAY/威世 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
Vishay(威世) |
2249+ |
62078 |
二十余載金牌老企 研究所優(yōu)秀合供單位 您的原廠窗口 |
詢價 | |||
Infineon(英飛凌) |
23+ |
TO-252 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
VISHAY |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
VISHAY/威世 |
09+ |
TO-252 |
12044 |
原裝優(yōu)勢庫存,有意請來電或QQ微信溝通。 |
詢價 | ||
VISHAY |
07+ |
原廠原裝 |
3000 |
自己公司全新庫存絕對有貨 |
詢價 |
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