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首頁 >IRF3710STR>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF3710STRLPBF	文件：297.54 Kbytes Page：10 Pages	Advanced Process Technology VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig	IRF International Rectifier	IRF
IRF3710STRRPBF	文件：297.54 Kbytes Page：10 Pages	HEXFET? Power MOSFET VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig	IRF International Rectifier	IRF
IRF3710Z	文件：270.17 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp	IRF International Rectifier	IRF
IRF3710Z	文件：4.63191 Mbytes Page：12 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF3710Z	文件：339.41 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF3710Z	文件：1.13608 Mbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
IRF3710ZGPBF	文件：293.92 Kbytes Page：9 Pages	AdvancedProcessTechnology VDSS=100V RDS(on)=18m? ID=59A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved	IRF International Rectifier	IRF
IRF3710ZL	文件：270.17 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp	IRF International Rectifier	IRF
IRF3710ZL	文件：4.63191 Mbytes Page：12 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF3710ZL	文件：301.06 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF3710ZLPBF	文件：323.95 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr	IRF International Rectifier	IRF
IRF3710ZPBF	文件：323.95 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr	IRF International Rectifier	IRF
IRF3710ZPBF	文件：387.76 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF3710ZS	文件：270.17 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp	IRF International Rectifier	IRF
IRF3710ZS	文件：4.63191 Mbytes Page：12 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF3710ZS	文件：189.74 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRF3710ZSPBF	文件：323.95 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr	IRF International Rectifier	IRF
IRFI3710	文件：161.21 Kbytes Page：8 Pages	HEXFETPowerMOSFET Through-HolePackags TO-220FullPak(FullyIsolated)	IRF International Rectifier	IRF
IRFN3710	文件：132.03 Kbytes Page：4 Pages	TRANSISTORN-CHANNEL(BVdss=100V,Rds(on)=0.028ohm,Id=45A) 100Volt,0.028?,HEXFET Generation5HEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETsarewellknown,prov	IRF International Rectifier	IRF
IRFN3710	文件：46.66 Kbytes Page：2 Pages	N??HANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	IRF3710STRRPBF	Infineon(英飛凌)	23+	D2PAK	8357	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
柒號芯城電子商務(深圳)有限公司	IRF3710STRRPBF	IR	2024+	N/A	70000	柒號只做原裝現(xiàn)貨價秒殺全網	詢價
深圳市華來深電子有限公司	IRF3710STRRPBF	IR	23+	TO-263	11846	一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價
深圳市近平電子有限公司	IRF3710STRRPBF	IR	12+	TO263	2500	原裝現(xiàn)貨/特價	詢價
中天科工半導體（深圳）有限公司	IRF3710STRRPBF	INFINEONINEON	20+	原裝	65790	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
上海市鑫鴻達電子	IRF3710STRRPBF	International Rectifier	2022+		1	全新原裝貨期兩周	詢價
深圳市斌騰達科技有限公司	IRF3710STRRPBF	Infineon Technologies	21+	D2PAK	800	100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營)!	詢價
深圳市鼎欣微電子有限公司	IRF3710STRRPBF	IR	21+	TO-263	30000	只做正品原裝現(xiàn)貨	詢價
深圳市艾宇欣科技有限公司	IRF3710STRRPBF	Infineon	1931+	N/A	493	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
艾睿國際（香港）有限公司	IRF3710STRRPBF	Infineon(英飛凌)	2112+	D2PAK	115000	800個/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期	詢價

更多IRF3710STR供應商更新時間2024-11-8 17:54:00

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