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IRF5305SPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF5305SPBF

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF5305SPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF5305STRL

-55VP-ChannelMOSFET

Features *VDS(V)=-55V *ID=-31A(VGS=-10V) *RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRF5305STRLPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF5305STRPBF

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF5305STRRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFNJ5305

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFR5305

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5305

PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A)

IRF

International Rectifier

IRFR5305

-60VP-ChannelEnhancementModeMOSFET

GENERALFEATURESVDS=-60V,ID=-30A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRFR5305

-60VP-ChannelEnhancementModeMOSFET

DESCRIPTION Theusesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR5305PBF

HEXFET?PowerMOSFET(VDSS=-55V,RDS(on)=0.065廓,ID=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

IRF

International Rectifier

IRFR5305PBF

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5305PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR5305PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR5305PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR5305PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR5305TR

-60VP-ChannelEnhancementModeMOSFET

GENERALFEATURESVDS=-60V,ID=-30A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRFR5305TR

-60VP-ChannelEnhancementModeMOSFET

DESCRIPTION Theusesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF5305SPBF

  • 功能描述：

    MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-263
12500
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IR
24+
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501298
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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IR
2024+
N/A
70000
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IR
23+
D2PAK
9365
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Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
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IR
1736+
TO263
8529
只做進口原裝正品假一賠十!
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IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
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IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IR
22+23+
TO-263
44607
絕對原裝正品全新進口深圳現(xiàn)貨
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IR
20+
TO-263
2800
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更多IRF5305SPBF供應(yīng)商 更新時間2024-12-23 16:51:00

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