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IRF3710ZGPBF規(guī)格書詳情
VDSS = 100V
RDS(on) = 18m?
ID = 59A
Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
產(chǎn)品屬性
- 型號：
IRF3710ZGPBF
- 功能描述：
MOSFET 100V HALOGEN-FREE 1 N-CH HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VB |
TO-220 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
24+ |
TO-262 |
8866 |
詢價 | |||
IR |
23+ |
TO-262 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
21+ |
TO-262 |
12588 |
原裝正品,價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
TO-262 |
35890 |
詢價 | |||
IR |
22+ |
TO-262 |
8900 |
英瑞芯只做原裝正品!!! |
詢價 | ||
IR |
2023+ |
TO-262 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Infineon Technologies |
2022+ |
TO-220-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 |
