首頁(yè) >IRF4905PBF>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF4905PBF | HEXFET Power MOSFET | IRF International Rectifier | IRF | |
IRF4905PBF | P-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
Advanced Process Technology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.02ohm,Id=-74A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-74A@TC=25℃ ·DrainSourceVoltage-VDSS=-550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-74A@TC=25℃ ·DrainSourceVoltage-VDSS=-550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET VDSS=-55V RDS(on)=20m? ID=-42A Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyo | IRF International Rectifier | IRF | ||
-60VP-ChannelMOSFET Features *AdvancedProcessTechnology *UltraLowOn-Resistance *150°COperatingTemperature *FastSwitching *RepetitiveAvalancheAlloweduptoTjmax *SomeParametersAreDifferrentfrom IRF4905S *VDS(V)=-60V *ID=-42A(VGS=-10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
-60VP-ChannelMOSFET Description Featuresofthisdesignarea150°Cjunctionoperating temperature,fastswitchingspeedandimproved repetitiveavalancherating.Thesefeatures combinetomakethisdesignanextremelyefficient andreliabledeviceforuseinawidevarietyofother applications. Features | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
-60VP-ChannelMOSFET Description Featuresofthisdesignarea150°Cjunctionoperating temperature,fastswitchingspeedandimproved repetitiveavalancherating.Thesefeatures combinetomakethisdesignanextremelyefficient andreliabledeviceforuseinawidevarietyofother applications. Features | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
17-W,2-ChannelBTLAFHigh-EfficiencyPowerAmplifierforCarStereoSystems Overview TheLA4905isaBTL2-channelpoweramplifierICforuseincaraudiosystems.Increasesinthenumberofexternalcomponentsareheldtoaminimumbyadoptingbothasignal-followingtypeswitchingschemeintheamplifier’soutputstagepowersupply,andanewly-developednonlinearampl | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO |
詳細(xì)參數(shù)
- 型號(hào):
IRF4905PBF
- 功能描述:
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon |
23+ |
TO-220 |
20000 |
原裝正品,開增值稅專票。 |
詢價(jià) | ||
IR |
2021+ |
TO220 |
16800 |
全新原裝正品,自家優(yōu)勢(shì)現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
14037 |
保證進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
9600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
15000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
22000 |
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
INFINEON |
21+ |
SMD |
16230 |
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨! |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-220-3 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
INFINEON |
21+ |
TO-247 |
1600 |
原裝 真實(shí)庫(kù)存 實(shí)單請(qǐng)給TP |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-220 |
6000 |
原裝現(xiàn)貨支持實(shí)單假一罰百 |
詢價(jià) |
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