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IRF3710ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF3710ZPBF
廠商型號

IRF3710ZPBF

功能描述

AUTOMOTIVE MOSFET

文件大小

323.95 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-8 16:38:00

IRF3710ZPBF規(guī)格書詳情

Description

Specifically designed for Automotive applications,this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRF3710ZPBF

  • 功能描述:

    MOSFET MOSFT 100V 59A 18mOhm 82nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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原裝正品,假一賠十!
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原裝正品假一罰百!可開增票!
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