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STGW30N120KD

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGW30N120KD

30 A - 1200 V - short circuit rugged IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGW30N120KD

包裝：卷帶（TR） 封裝/外殼：TO-247-3 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 60A 220W TO247

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STGW30N120KD_V01

30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

FGA30N120FTD

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGA30N120FTDTU

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGH30N120FTD

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGH30N120FTDTU

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGW30N120H

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機富士電機株式會社

FGW30N120HD

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機富士電機株式會社

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

Intersil

Intersil Corporation

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

Intersil

Intersil Corporation

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HIH30N120TF

1200VFieldStopTrenchIGBT

SEMIHOW

SemiHow Co.,Ltd.

IHW30N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDH30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGW30N120KD

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列：

    PowerMESH?

  • 包裝：

    卷帶（TR）

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    3.85V @ 15V，20A

  • 開關能量：

    2.4mJ（開），4.3mJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    36ns/251ns

  • 測試條件：

    960V，20A，10 歐姆，15V

  • 工作溫度：

    -55°C ~ 125°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應商器件封裝：

    TO-247-3

  • 描述：

    IGBT 1200V 60A 220W TO247

供應商型號品牌批號封裝庫存備注價格
ST/意法
2410+
TO-247
18000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
ST
24+
TO-247-3
568
詢價
STM進口
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價
STMicro.
23+
TO-247
7750
全新原裝優(yōu)勢
 詢價
ST
10+
5000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
ST
1816+
TO-247
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
STM
17+
TO-247
9888
只做原裝,現(xiàn)貨庫存
 詢價
ST全系列
22+23+
TO-247
25944
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
STM
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
STM原廠目錄
24+
TO-247
28500
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
更多STGW30N120KD供應商 更新時間2024-12-22 16:12:00

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