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FGW30N120HD

Discrete IGBT (High-Speed V series) 1200V / 30A

FujiFuji Electric

富士電機富士電機株式會社

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

Intersil

Intersil Corporation

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

Intersil

Intersil Corporation

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HIH30N120TF

1200VFieldStopTrenchIGBT

SEMIHOW

SemiHow Co.,Ltd.

IHW30N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    FGW30N120HD

  • 制造商：

    Fuji Electric

  • 功能描述：

    IC,IGBT; High-Speed V-Series; 1200V; 30A; 260W; TP-247-P2

供應商型號品牌批號封裝庫存備注價格
FUJI/富士電機
2410+
TO-220
3000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
FujiElectric
24+
NA
3409
進口原裝正品優(yōu)勢供應
 詢價
FujiSemiconductor
新
5
全新原裝 貨期兩周
 詢價
FUJI原裝
22+23+
TO-220
24879
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
Fuji Semiconductor
2022+
1
全新原裝 貨期兩周
 詢價
FUJITSU/富士通
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FUJITSU/富士通
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FUJITSU/富士通
2022
TO-247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
FUJITSU/富士通
2022+
TO-247
11
原廠代理 終端免費提供樣品
 詢價
FUJITSU/富士通
13+;10+
TO-247
48
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多FGW30N120HD供應商 更新時間2025-3-13 16:12:00

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