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STGW60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGW60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGW60V60DF

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 80A 375W TO247

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGW60V60DF_V01

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

G60V60DF

Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

GW60V60DF

Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

GWT60V60DF

Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGW60V60F

Lowthermalresistance

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGWA60V60DF

Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGWA60V60DWFAG

Automotive-gradetrenchgatefield-stop600V,60AveryhighspeedVseriesIGBTfeaturingfreewheelingSiCdiode

Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?VCE(sat)=1.85V(typ.)@IC=60A ?Tail-lessswitchingcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient ?Siliconcarbidediodewithno-reverserecover

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGWT60V60DF

Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed

Features ?Maximumjunctiontemperature:TJ=175°C ?Tail-lessswitchingoff ?VCE(sat)=1.85V(typ.)@IC=60A ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecoveryantiparalleldiode Applications ?Photovoltaicinverters ?Uninterr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGWT60V60DF

Trenchgatefield-stopIGBT,Vseries600V,60Averyhighspeed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGW60V60DF

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    溝槽型場截止

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.3V @ 15V，60A

  • 開關(guān)能量：

    750μJ（開），550μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    60ns/208ns

  • 測試條件：

    400V，60A，4.7 歐姆，15V

  • 工作溫度：

    -55°C ~ 175°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247-3

  • 描述：

    IGBT 600V 80A 375W TO247

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
23+
TO-247
928
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
STMicroelectronics
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
ST/意法
22+
31680
原廠原裝現(xiàn)貨
 詢價
STM
21+
TO-247-3
600
原裝正品 有掛有貨
 詢價
ST/意法
24+
TO-247
5
只做原廠渠道 可追溯貨源
 詢價
STM
21+
600
TO-247-3
 詢價
ST/意法
23+
TO220
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
 詢價
STMicroelectronics
21+
TO-247-2
600
保證原裝正品 深圳現(xiàn)貨
 詢價
ST/意法
22+
TO-247
12543
原裝正品
 詢價
STM
23+
TO-247-3
1200
原裝現(xiàn)貨支持送檢
 詢價
更多STGW60V60DF供應(yīng)商 更新時間2024-10-25 17:48:00

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