首頁(yè) >NGTB30N120IHLWG>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NGTB30N120IHLWG | IGBT | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NGTB30N120IHLWG | 包裝:散裝 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 30A TO247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
IGBTwithMonolithicFreeWheelingDiode | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT Features 1200V,30A VCE(sat)(typ.)=2.2V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOAusingNPTtechnology GeneralDescription NPTIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheati | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
IGBT Features 1200V,30A VCE(sat)(typ.)=2.2V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOAusingNPTtechnology GeneralDescription NPTIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheati | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
Lowcapacitance | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
30A-1200V-shortcircuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
NGTB30N120IHLWG
- 制造商:
onsemi
- 類(lèi)別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
散裝
- IGBT 類(lèi)型:
溝槽型場(chǎng)截止
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.2V @ 15V,30A
- 開(kāi)關(guān)能量:
1mJ(關(guān))
- 輸入類(lèi)型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
-/360ns
- 測(cè)試條件:
600V,30A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類(lèi)型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT 1200V 30A TO247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON Semiconductor |
22+ |
TO247 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON Semiconductor |
23+ |
TO247 |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
ON原廠 |
2014 |
TO247 |
10 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON Semiconductor |
2022+ |
TO-247 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢價(jià) | ||
ON |
2216+ |
TO247 |
3342 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
ON原廠 |
TO247 |
90000 |
公司集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨- |
詢價(jià) | |||
ON原廠 |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量 |
詢價(jià) |
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