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RLPGB30N120LCT

IGBT

Features 1200V,30A VCE(sat)(typ.)=2.2V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOAusingNPTtechnology GeneralDescription NPTIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheati

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FGA30N120FTD

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGA30N120FTDTU

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGH30N120FTD

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGH30N120FTDTU

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGW30N120H

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機富士電機株式會社

FGW30N120HD

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機富士電機株式會社

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

Intersil

Intersil Corporation

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

Intersil

Intersil Corporation

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HIH30N120TF

1200VFieldStopTrenchIGBT

SEMIHOW

SemiHow Co.,Ltd.

IHW30N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDH30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Corporation

IXDH30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDR30N120

HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage

HighVoltageIGBTwithoptionalDiodeISOPLUS?package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features ?NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -

IXYS

IXYS Corporation

IXDT30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

供應商型號品牌批號封裝庫存備注價格
Phoenix/菲尼克斯
23/24+
2773513
7490
優(yōu)勢特價 原裝正品 全產(chǎn)品線技術支持
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只做原裝
21+
BGA-165D
36520
一級代理/放心采購
詢價
RENESAS/瑞薩
23+
BGA-165D
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
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RLQC50ULCLN090P1
6
6
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TDK/東電化
SLF7045T101R50C41
7 4X7 4X5 8-100UH
10000
全新原裝現(xiàn)貨 樣品可售
詢價
VISHAY
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
2000
400
詢價
VISHAY
20+
電阻器
2683
就找我吧!--邀您體驗愉快問購元件!
詢價
VISHAY(威世)
21+
Axial
27500
航宇科工半導體-央企合格優(yōu)秀供方
詢價
DALE/VISHAY
100
全新原裝 貨期兩周
詢價
更多RLPGB30N120LCT供應商 更新時間2024-12-24 8:49:00