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IXFH6N100Q

HiPerFET Power MOSFETs Q-Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFH6N100Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM6N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM6N100

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT6N100F

PowerMOSFETs

Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch

IXYS

IXYS Corporation

IXFT6N100Q

HiPerFETPowerMOSFETsQ-Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

MTH6N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTV6N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV6N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTV6N100E

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE-FET? PowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresur

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    IXFH6N100Q

  • 功能描述：

    MOSFET 6 Amps 1000V 2 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
17+
TO-247
31518
原裝正品 可含稅交易
 詢價
IXYS/艾賽斯
23+
TO-247
65493
原裝正品 華強現(xiàn)貨
 詢價
IXYS
1931+
N/A
55
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
55
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS/艾賽斯
21+
TO247
10000
原裝現(xiàn)貨假一罰十
 詢價
IXYS
21+
TO2473
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
TO-247
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS/艾賽斯
23+
TO-247
6000
原裝正品，支持實單
 詢價
更多IXFH6N100Q供應(yīng)商 更新時間2025-3-8 20:53:00

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