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MTV6N100E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTV6N100E

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

TMOSE-FET? PowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresur

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV6N100E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW6N100

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW6N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW6N100E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW6N100E

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

OM6N100NK

POWERMOSFETSINATO-3PACKAGE

ETCList of Unclassifed Manufacturers

未分類制造商

OM6N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

SFF6N100

4.5AMP1000VOLTS2ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

詳細(xì)參數(shù)

  • 型號：

    MTV6N100E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
2480
詢價
ADI/亞德諾
21+
原封裝
13880
公司只售原裝,支持實(shí)單
 詢價
ADI/亞德諾
21+
原封裝
610880
本公司只售原裝 支持實(shí)單
 詢價
ADI/亞德諾
原封裝
66900
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ADI/亞德諾
22+
66900
原封裝
 詢價
ADI/亞德諾
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ADI/亞德諾
22+
QFN
20000
原裝現(xiàn)貨,實(shí)單支持
 詢價
ADI
23+
QFN
8000
只做原裝現(xiàn)貨
 詢價
RAONTEC
QFN40
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
RAONTECH
QFN
10265
提供BOM表配單只做原裝貨值得信賴
 詢價
更多MTV6N100E供應(yīng)商 更新時間2025-2-4 10:20:00

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