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IXFK55N50

HiPerRF Power MOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFK55N50

HiPerFET Power MOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFK55N50

HiPerFET Power MOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFK55N50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK55N50F

HiPerRFTM Power MOSFETs

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Corporation

IXFK55N50F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFN55N50

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·ACandDCMotorDrives ·HighSpeedPowerSwitchingApplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFN55N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN55N50

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFN55N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFK55N50

  • 功能描述：

    MOSFET 500V 55A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264AA
175
詢價
IXY
06+
TO-3PL
500
原裝
 詢價
IXYS
23+
TO-3PL
5000
原裝正品,假一罰十
 詢價
IXFK
24+
TO264
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
 詢價
IXYS
24+
TO-3PL
269
詢價
IXYS
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
 詢價
更多IXFK55N50供應商 更新時間2025-2-10 15:30:00

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