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IXFH6N120P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH6N120P

Polar HiPerFET Power MOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFH6N120P

Power MOSFET

IXYS

IXYS Corporation

IXFP6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP6N120P

PowerMOSFET

IXYS

IXYS Corporation

IXFP6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXTH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighpowerdensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH6N120

HighVoltagePowerMOSFET

IXYS

IXYS Corporation

IXTT6N120

HighVoltagePowerMOSFET

IXYS

IXYS Corporation

MP6N120-C-B

N-CHANNELMOSFET

APPLICATIONS ?Highefficiencyswitchmode powersupplies ?Electroniclampballasts basedonhalfbridge ?UPS FEATURES ?PlanarMOS ?Lowgatecharge ?LowCrss(typical7.0pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFH6N120P

  • 功能描述：

    MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
26008
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
IXYS/艾賽斯
17+
TO-247
31518
原裝正品 可含稅交易
 詢價(jià)
IXYS
20000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價(jià)
IXYS
23+
TO-247
2200
有掛有貨,原裝正品,代理處分貨
 詢價(jià)
IXYS
1844+
TO-247
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
IXYS
22+23+
TO-247
15434
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IXYS/艾賽斯
14+
TO-247
30188
進(jìn)口管盒現(xiàn)貨/30
 詢價(jià)
IXYS
2020+
TO-3P
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
IXYS
1931+
N/A
18
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更多IXFH6N120P供應(yīng)商 更新時(shí)間2025-3-24 14:13:00

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