首頁 >IXFA12N50P>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXFA12N50P | Polar Power MOSFET HiperFET Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | |
IXFA12N50P | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PolarPowerMOSFETHiperFET Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET?(ElectricallyIsolatedTab) N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easyt | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
12AMPS,450-500V,0.4OM/0.5OM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
StandardPowerMOSFET Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
12AMPS,450-500V,0.4OM/0.5OM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFET Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PolarTMPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
IXFA12N50P
- 功能描述:
MOSFET 500V 12A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-263(IXFA) |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-263 |
26008 |
原裝正品 華強現(xiàn)貨 |
詢價 | ||
IXYS/艾賽斯 |
17+ |
TO-263 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
IXYS |
23+ |
DIP18 |
6000 |
15年原裝正品企業(yè) |
詢價 | ||
Littelfuse/IXYS |
23+ |
TO-263 |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IXYS/艾賽斯 |
24+ |
TO-263 |
501575 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IXYS |
24+ |
TO-263 |
8866 |
詢價 | |||
IXYS |
23+ |
TO-263-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
JINGDAO/晶導微 |
23+ |
SMBF |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 |
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