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IXTA12N50P

N-Channel Enhancement Mode Avalanche Rated

N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount

IXYS

IXYS Corporation

IXTA12N50P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH12N50

12AMPS,450-500V,0.4OM/0.5OM

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

IXTH12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH12N50A

StandardPowerMOSFET

Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM12N50

12AMPS,450-500V,0.4OM/0.5OM

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

IXTM12N50A

StandardPowerMOSFET

Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTP12N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP12N50PM

PolarTMPowerMOSFET

IXYS

IXYS Corporation

IXTP12N50PM

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JCS12N50C

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50CC-O-C-N-B

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50FC-O-F-N-B

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50SC-O-S-N-A

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50SC-O-S-N-B

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MDF12N50

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50B

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50BTH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF12N50F

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTA12N50P

  • 功能描述：

    MOSFET 12.0 Amps 500 V 0.5 Ohm Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-263AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS/艾賽斯
24+
TO-263
501582
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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IXYS
24+
TO-263
230
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IXYS
23+
TO-263-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IXYS
2020+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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AP
23+
SO-8
69820
終端可以免費(fèi)供樣,支持BOM配單!
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IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
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IXYS/艾賽斯
2021+
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
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IXYS
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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IXYS/艾賽斯
23+
TO-263
10000
公司只做原裝正品
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更多IXTA12N50P供應(yīng)商 更新時(shí)間2024-10-25 21:12:00

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