首頁(yè) >IXFH26N60Q>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IXFH26N60Q | HiPerFETTM Power MOSFETs Q-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa | IXYS IXYS Corporation | IXYS | |
IXFH26N60Q | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS HiPerFET?PowerMOSFETsISOPLUS247?Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2 | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurrentrated ? | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi | IXYS IXYS Corporation | IXYS | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV?PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features ?FastRecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Internationalstandardpackages ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavi | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHVPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHVPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHVPowerMOSFET | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號(hào)：
IXFH26N60Q
- 功能描述：
MOSFET 600V 26A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IXYS/艾賽斯 |
24+ |
TO-251 |
30 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
59580 |
原裝正品 華強(qiáng)現(xiàn)貨 |
詢價(jià) | ||
IXYS |
24+ |
TO-247AD |
48 |
詢價(jià) | |||
IXYS |
N/A |
主營(yíng)模塊 |
190 |
原裝正品,現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IXYS艾塞斯 |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IXYS |
20+ |
TO-247 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
2100 |
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
1377 |
詢價(jià) |
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