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IXFH36N60P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH36N60P

PolarHV HiPerFET Power MOSFET

IXYS

IXYS Corporation

FCA36N60NF

N-ChannelMOSFET,FRFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA36N60NF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCB36N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCB36N60N

N-ChannelSupreMOS?MOSFET600V,36A,90m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCB36N60N

N-ChannelSupreMOS?MOSFET600V,36A,90m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCB36N60NTM

N-ChannelSupreMOS?MOSFET600V,36A,90m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP36N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP36N60N

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCP36N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCPF36N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCPF36N60NT

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXFK36N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK36N60

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpol

IXYS

IXYS Corporation

IXFK36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN36N60

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpol

IXYS

IXYS Corporation

IXFR36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFT36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFH36N60P

  • 功能描述：

    MOSFET 600V 36A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-247
65000
原裝正品 華強現(xiàn)貨
 詢價
IXYS/艾賽斯
24+
TO247
27
原廠授權(quán)代理 價格絕對優(yōu)勢
 詢價
Littelfuse/IXYS
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IXYS
2023
NA
3560
原廠代理渠道,正品保障
 詢價
IXYS
24+
TO-247
139
詢價
IXYS
23+
TO247
8653
全新原裝優(yōu)勢
 詢價
IXYS
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
IXYS訂貨
22+23+
TO-247
42387
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IXYS
21+
TO-247
12588
原裝正品,自己庫存 假一罰十
 詢價
更多IXFH36N60P供應(yīng)商 更新時間2024-12-26 18:53:00

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