首頁 >IXFH110N10P>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IXFH110N10P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH110N10P

PolarHT HiPerFET Power MOSFET

IXYS

IXYS Corporation

ET110N10-Z

StandardSizeToggleSwitch

COPALCopal Electronics

尼得科科智博電子尼得科科智博電子(上海)有限公司

FIR110N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

IXFC110N10P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC110N10P

PolarHVHiPerFETPowerMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFV110N10P

PolarHTHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFV110N10PS

PolarHTHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXTQ110N10P

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max) ?FastSwitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ110N10P

N-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTT110N10P

N-ChannelEnhancementMode

PolarHT?PowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

SUM110N10

N-Channel100V(D-S)175°CMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IXFH110N10P

  • 功能描述：

    MOSFET 110 Amps 100V 0.015 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-247
59620
原裝正品 華強現(xiàn)貨
 詢價
IXYS
24+
TO-247
8866
詢價
IXYS
23+
TO-247
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
IXYS
18+
NA
3563
進口原裝正品優(yōu)勢供應QQ3171516190
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
I
23+
TO-247
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXFH110N10P供應商 更新時間2024-12-26 11:44:00

相關規(guī)格書

更多

相關庫存

更多