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IS61LV12824-10BL

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV12824isahigh-speed,staticRAMorganizedas131,072wordsby24bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithlowpowercons

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12824-10BL

包裝：卷帶（TR） 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 3MBIT PARALLEL 119PBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS61LV12824-10BL-TR

包裝：卷帶（TR） 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 3MBIT PARALLEL 119PBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS61LV12824-10B

128Kx24HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12824isahigh-speed,staticRAMorganizedas131,072wordsby24bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithlowpowercons

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12824-10BI

128Kx24HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12824isahigh-speed,staticRAMorganizedas131,072wordsby24bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithlowpowercons

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12824-10TQ

128Kx24HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12824isahigh-speed,staticRAMorganizedas131,072wordsby24bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithlowpowercons

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12824-10TQI

128Kx24HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12824isahigh-speed,staticRAMorganizedas131,072wordsby24bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithlowpowercons

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12824-10TQLI

128Kx24HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12824isahigh-speed,staticRAMorganizedas131,072wordsby24bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithlowpowercons

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IS61LV12824-10BL

  • 制造商：

    ISSI, Integrated Silicon Solution Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲容量：

    3Mb（128K x 24）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    10ns

  • 電壓 - 供電：

    3.135V ~ 3.6V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    119-BGA

  • 供應(yīng)商器件封裝：

    119-PBGA（14x22）

  • 描述：

    IC SRAM 3MBIT PARALLEL 119PBGA

供應(yīng)商型號品牌批號封裝庫存備注價格
ISSI
23+
119-BGA(14x22)
36430
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
ISSI
24+
SMD
15600
靜態(tài)隨機存取存儲器3Mb128Kx2410nsAsync靜態(tài)隨機存取
 詢價
ISSI
10+
BGA
26479
原托盤盒現(xiàn)貨
 詢價
ISSI, Integrated Silicon Solut
21+
96-TFBGA
5280
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
ISSI, Integrated Silicon Solut
24+
119-PBGA(14x22)
56200
一級代理/放心采購
 詢價
ISSI
21+
BGA
10000
只做正品原裝現(xiàn)貨
 詢價
ISSI
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
ISSI
2021+
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ISSI
20+
BGA-119
84
就找我吧!--邀您體驗愉快問購元件!
 詢價
ISSI
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IS61LV12824-10BL供應(yīng)商 更新時間2025-1-6 10:50:00

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