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IS61LV6416-8TL

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-8TL

包裝：托盤 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS61LV6416-8TL-TR

包裝：托盤 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IC61LV6416-8B

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8BI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8K

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8KI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8T

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8TI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8B

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8BI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-8BI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8K

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8KI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8KL

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-8T

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8T

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-8TI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-8TI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

產品屬性

  • 產品編號：

    IS61LV6416-8TL

  • 制造商：

    ISSI, Integrated Silicon Solution Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術：

    SRAM - 異步

  • 存儲容量：

    1Mb（64K x 16）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    8ns

  • 電壓 - 供電：

    3.135V ~ 3.6V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    44-TSOP（0.400"，10.16mm 寬）

  • 供應商器件封裝：

    44-TSOP II

  • 描述：

    IC SRAM 1MBIT PARALLEL 44TSOP II

供應商型號品牌批號封裝庫存備注價格
ISSI
存儲器
TSOP
41979
ISSI原裝存儲芯片-誠信為本
 詢價
ISSI
16+
NA
8800
原裝現貨,貨真價優(yōu)
 詢價
ISSI
23+
44-TSOPII
1389
專業(yè)分銷產品!原裝正品!價格優(yōu)勢!
 詢價
ISSI
TSOP
9856
只做原裝貨值得信賴
 詢價
ISSI
1725+
?
8450
只做原裝進口,假一罰十
 詢價
ISSI
23+
NA
15000
專業(yè)電子元器件供應鏈正邁科技特價代理QQ1304306553
 詢價
ISSI
24+
TSOP
42500
專營ISSI進口原裝現貨可開17增值稅票
 詢價
ISSI
18+
TSOP44
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
ISSI
0846+
TSOP
16025
只做原廠原裝,認準寶芯創(chuàng)配單專家
 詢價
ISSI
1902+
TSOP
2734
代理品牌
 詢價
更多IS61LV6416-8TL供應商 更新時間2025-1-11 17:34:00

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