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IRF1405ZL

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZLPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405PPBF

HEXFET?PowerMOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingleand

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
TO-263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
TO-263
7000
詢價(jià)
IR
24+
TO-262
8866
詢價(jià)
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-262-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
24+
TO-262
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
INFINEON
1503+
TO-262
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
更多IRF1405ZFSTRR供應(yīng)商 更新時(shí)間2025-1-22 10:00:00

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