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IRF3710PBF

HEXFET Power MOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710PBF

57A,100V Heatsink Planar N-Channel Power MOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

IRF3710PBF_15

Advanced Process Technology

IRF

International Rectifier

IRF3710S

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3710SPBF

HEXFET?PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710STRLPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710STRRPBF

HEXFET?PowerMOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3710Z

N-ChannelEnhancementModeMOSFET

Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRF3710ZGPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=18m? ID=59A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3710ZL

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710ZL

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710ZL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3710ZLPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRF

International Rectifier

IRF3710ZPBF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRF

International Rectifier

IRF3710ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF3710ZS

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF3710PBF

  • 功能描述：

    MOSFET MOSFT 100V 57A 23mOhm 86.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-220
6050
原裝現(xiàn)貨,可開13%稅票
 詢價
INFINEON
21+/22+
75000
原裝正品
 詢價
IR
23+
TO-220
26371
保證進口原裝現(xiàn)貨假一賠十
 詢價
IR
1709
TO-220
4500
原裝正品現(xiàn)貨
 詢價
IR
2020+
TO-220
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
INFINEON
21+
SMD
16230
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
INFINEON/英飛凌
21+
TO-220
20000
原裝現(xiàn)貨假一罰十
 詢價
INFINEON/IR
1907+
NA
14050
20年老字號,原裝優(yōu)勢長期供貨
 詢價
INFINEON
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
 詢價
更多IRF3710PBF供應商 更新時間2025-1-16 8:40:00

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