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IRF1405ZLPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405ZS

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1405ZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1405ZSPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9m? ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRFBA1405

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405P

PowerMOSFET(Vdss=55V,Rds(on)=5.0mohm,Id=174A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fas

IRF

International Rectifier

IRFBA1405PPBF

HEXFET?PowerMOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisMOSFETarea175oCjunctionoperatingtemperature,fastswitchingspeedandimprovedruggednessinsingleand

IRF

International Rectifier

IRFBA1405PPBF

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF1405ZLPBF

  • 功能描述：

    MOSFET MOSFT 55V 150A 4.9mOhm 120nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
TO-262
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
IR
2016+
TO-262
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IR
24+
TO-262-3
4111
詢價(jià)
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價(jià)
IR
24+
TO-262
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
22+23+
TO-262
14732
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IR
2020+
TO-262
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價(jià)
更多IRF1405ZLPBF供應(yīng)商 更新時(shí)間2025-3-23 9:12:00

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