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IRF360

N-Channel MOSFET Transistor

DESCRIPTION ?siliconGateforfastswitchingatelevate ?rugged APPLICATIONS ?suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioamplifiersandhighenergypulsecircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF360

isc N-Channel MOSFET Transistor

DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioampl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF360

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-s

IRF

International Rectifier

IRF360

Repetitive Avalanche Ratings

IRF

International Rectifier

IRF360_15

Repetitive Avalanche Ratings

IRF

International Rectifier

IRFI360

TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET

IRF

International Rectifier

IRFI360

SimpleDriveRequirements

IRF

International Rectifier

IRFM360

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM360

SimpleDriveRequirements

IRF

International Rectifier

IRFM360

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP360

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP360

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRF

International Rectifier

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP360

MegaMOSFET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IRFP360

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP360

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP360

PowerMOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導體

IRFP360LC

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRF360

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 400V 25A 3-Pin(2+Tab) TO-204AE

  • 功能描述：

    TRANS MOSFET N-CH 400V 25A 3PIN TO-204AE - Bulk

  • 制造商：

    Harris Corporation

  • 功能描述：

    N CH MOSFET, 400V, 25A, TO-204AE, Transistor

  • Polarity：

    N Channel, Continuous Drain Current

  • Id：

    25A, Drain Source Voltage

  • Vds：

    400V, On Resistance

  • Rds(on)：

    200mohm, Rds(on) Test Voltage

  • Vgs：

    10V, Threshold Voltage

  • Vgs：

    4V, No. of

  • Pins：

    2 , RoHS

  • Compliant：

    No

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
專業(yè)鐵帽
TO-3
100
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
IR
2023+
2
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IR
24+
TO-3P
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IR
2021+
T0-3P
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
衛(wèi)光
23+
TO-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
22+
TO-3P
6000
十年配單,只做原裝
 詢價
更多IRF360供應(yīng)商 更新時間2025-1-16 8:00:00

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