IRF1405ZS中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF1405ZS規(guī)格書詳情
VDSS = 55V
RDS(on) = 4.9m?
ID = 75A
描述 Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
產品屬性
- 型號:
IRF1405ZS
- 功能描述:
MOSFET N-CH 55V 75A D2PAK
- RoHS:
否
- 類別:
分離式半導體產品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
1923+ |
TO263 |
5000 |
正品原裝品質假一賠十 |
詢價 | ||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
國產 |
詢價 | ||
IR |
1822+ |
TO263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
IR |
23+ |
D2-Pak |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
25+23+ |
TO-263 |
20828 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
2016+ |
TO263 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 |