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首頁(yè) >IRF710>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRF710	文件：56.15 Kbytes Page：7 Pages	2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRF710	文件：1.01954 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF710	文件：147.35 Kbytes Page：5 Pages	N-Channel Power MOSFETs, 2.25A, 350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF710	文件：791.66 Kbytes Page：3 Pages	N-Channel Power MOSFETs, 2.25 A, 350-400 V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF710	文件：791.66 Kbytes Page：3 Pages	IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF710	文件：203.87 Kbytes Page：2 Pages	N-Channel Mosfet Transistor ·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF710	文件：360.17 Kbytes Page：5 Pages	N-Channel Power MOSFETs	ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED.	ARTSCHIP
IRF710	文件：159.88 Kbytes Page：8 Pages	Power MOSFET FEATURES	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF710	文件：284.58 Kbytes Page：9 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF7101	文件：211.13 Kbytes Page：10 Pages	HEXFET Power MOSFET Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●20VVGSMax.GateRating ●100testedforRg Applications ●SynchronousMOSFETforNotebookProcessorPower ●SynchronousRectifierMOSFETforIsolatedDC-DCConverters	IRF International Rectifier	IRF
IRF7101	文件：265.04 Kbytes Page：9 Pages	HEXFET Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRF7101PBF	文件：275.91 Kbytes Page：9 Pages	HEXFET? Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRF7101TRPBF	文件：281.46 Kbytes Page：9 Pages	Adavanced Process Technology Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRF7103	文件：169.18 Kbytes Page：9 Pages	Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRF7103PBF	文件：273.24 Kbytes Page：9 Pages	HEXFET Power MOSFET Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The	IRF International Rectifier	IRF
IRF7103Q	文件：169.02 Kbytes Page：10 Pages	Power MOSFET(Vdss=50V) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMO	IRF International Rectifier	IRF
IRF7103TR	文件：420.2 Kbytes Page：9 Pages	Dual N-Channel MOSFET Features VDs(v=50V RDpsON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)	UMW
IRF7103TRPBF	文件：309.95 Kbytes Page：10 Pages	adavanced process technology Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The	IRF International Rectifier	IRF
IRF7104	文件：158.94 Kbytes Page：9 Pages	HEXFET Power MOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRF7104	文件：682.91 Kbytes Page：7 Pages	-30V Dual P-Channel MOSFET Benefits ?VDS(V)=-30V ?ID=-2.3A ?RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRF710
功能描述：
MOSFET N-Chan 400V 2.0 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
綠盛電子(香港)有限公司	IRF710	IR	2015+	TO-220	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市聯(lián)世界科技有限公司（原深創(chuàng)輝科技）	IRF710	IR	1995		26	原裝正品長(zhǎng)期供貨，如假包賠包換徐小姐13714450367	詢價(jià)
深圳市昌和盛利電子有限公司	IRF710	IR	23+	TO-220	19526		詢價(jià)
深圳市卓越微芯電子有限公司	IRF710	IR	2020+	TO-220	22	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市星佑電子有限公司	IRF710	IR	06+	TO-220	8000	原裝庫(kù)存	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRF710	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRF710	SEC	23+	34-PCM	5000	原裝正品,假一罰十	詢價(jià)
深圳市弘為電子有限公司	IRF710	VISHAY/IR	16+	原廠封裝	550	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市博浩通科技有限公司	IRF710	IOR	23+	TO-	8890	價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRF710	IR	24+	原裝	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)

更多IRF710供應(yīng)商更新時(shí)間2024-10-26 9:28:00

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