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IPB600N25N3G

OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB600N25N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G_10

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPB600N25N3G

  • 制造商：

    Rochester Electronics LLC

  • 制造商：

    Infineon Technologies AG

供應商型號品牌批號封裝庫存備注價格
INFINOEN
2021+
TO-263
16800
全新原裝正品,自家優(yōu)勢現(xiàn)貨
 詢價
Infineon(英飛凌)
23+
TO263
2524
原廠直供,支持賬期,免費供樣,技術(shù)支持
 詢價
INFINEON
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
INFINEON/英飛凌
1904+
TO-263
5000
進口原裝支持含稅
 詢價
INFINEON
19+
TO-263
5000
全新原裝公司現(xiàn)貨
詢價
INFINEON/英飛凌
24+
TO-263
177
只做原廠渠道 可追溯貨源
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON
23+
TO-263
20000
進口原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
24+
N/A
5000
只做正品原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
23+
TO263
13316
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
 詢價
更多IPB600N25N3G供應商 更新時間2025-2-26 16:46:00

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