首頁 >IPB60R099CP>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPB60R099CP | CoolMOS Power Transistor Features ?WorldwidebestRds,oninTO263 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPB60R099CP | Isc N-Channel MOSFET Transistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
CoolMOS Power Transistor Features ?WorldwidebestRds,oninTO263 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?AutomotiveAECQ101qualified ?Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: ?DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.099? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features ?WorldwidebestRds,oninTO220 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Highpeakcurrentcapability Features ?WorldwidebestRds,oninTO220 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?WorldwidebestRds,oninTO262 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?AutomotiveAECQ101qualified ?Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: ?DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.099? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?WorldwidebestRds,oninTO220 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?WorldwidebestRds,oninTO220 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?AutomotiveAECQ101qualified ?Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: ?DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOSCPisspeciallydesignedfor: ?HardswitchingSMPStopologiesfor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?HighPeakCurrentCapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤99m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.105Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?AutomotiveAECQ101qualified ?Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: ?DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數
- 型號:
IPB60R099CP
- 功能描述:
MOSFET COOL MOS PWR TRANS MAX 650V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
2021+ |
TO-263 |
18054 |
原裝進口假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-263 |
8903 |
誠信經營..品質保證..價格優(yōu)勢 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-263 |
3086 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon |
21+ |
TO-263 |
5770 |
只做進口原裝,優(yōu)勢現貨,支持實單 |
詢價 | ||
INFINEON |
22+ |
INFINEON |
6850 |
十七年VIP會員,誠信經營,一手貨源,原裝正品可零售! |
詢價 | ||
英飛翎 |
17+ |
D2PAK(TO-263) |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
TO-263 |
9000 |
原裝現貨,隨時歡迎詢價 |
詢價 | ||
Infineon(英飛凌) |
23+ |
N/A |
8000 |
原裝,正品 |
詢價 | ||
Infineon |
2024+ |
TO-263-3 |
32560 |
原裝優(yōu)勢絕對有貨 |
詢價 |
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