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IPB65R380C6

650V CoolMOS C6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R380C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R380C6

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD65R380C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?Veryhighcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPD65R380C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R380C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R380C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R380C6

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI65R380C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R380C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP65R380C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R380C6

650VCoolMOSC6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPB65R380C6

  • 功能描述：

    MOSFET 650V CoolMOS C6 Power Transistor

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
2021+
SOT-263
16993
原裝進口假一罰十
 詢價
Infineon(英飛凌)
23+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINE0N
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INFINEON
20+
D2PAK(TO-263)
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
INFINEON/英飛凌
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
INFINEON/英飛凌
23+
D2PAK(TO-263)
10000
公司只做原裝正品
 詢價
INFINEON/英飛凌
23+
D2PAK(TO-263)
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
英飛翎
22+
D2PAK(TO-263)
6000
十年配單,只做原裝
 詢價
INFINEON/英飛凌
21+
TO-263
5590
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
INFINEON/英飛凌
23+
TO-263
6000
原裝正品，支持實單
 詢價
更多IPB65R380C6供應商 更新時間2024-12-22 14:04:00

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