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首頁 >IPB60R280C6>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IPB60R280C6	文件：2.38545 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB60R280C6	文件：1.43803 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB60R280C6	文件：1.59291 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB60R280C6	文件：189.55 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPI60R280C6	文件：331.03 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPI60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP60R280C6	文件：338.57 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.28? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW60R280C6	文件：335.38 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤280m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPW60R280C6	文件：2.38545 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW60R280C6	文件：1.43803 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX60R280C6	文件：1.59291 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

詳細(xì)參數(shù)

型號：
IPB60R280C6
功能描述：
MOSFET COOLM
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市高捷芯城科技有限公司	IPB60R280C6	Infineon(英飛凌)	23+	TO-263	8498	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價(jià)
柒號芯城電子商務(wù)(深圳)有限公司	IPB60R280C6	INFINEON	2024+	N/A	70000	柒號只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市達(dá)恩科技有限公司	IPB60R280C6	Infineon	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190	詢價(jià)
深圳市華來深電子有限公司	IPB60R280C6	INFINE0N	23+	TO-263	11846	一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IPB60R280C6	INFINEON	20+	D2PAK(TO-263)	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價(jià)
深圳市維爾達(dá)電子有限公司	IPB60R280C6	INFINOEN	2023+	D2PAK(TO	80000	一級代理/分銷渠道價(jià)格優(yōu)勢十年芯程一路只做原裝正品	詢價(jià)
深圳市艾宇欣科技有限公司	IPB60R280C6	Infineon	1931+	N/A	493	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳市仟禧電子有限公司	IPB60R280C6	INFINEON/英飛凌	22+	SOT-263	20000	保證原裝正品,假一陪十	詢價(jià)
艾睿國際（香港）有限公司	IPB60R280C6	Infineon(英飛凌)	2112+	TO-263-2	115000	1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,	詢價(jià)
深圳市晴軒時(shí)代電子有限公司	IPB60R280C6	Infineon/英飛凌	21+	TO-263-2	8800	公司只作原裝正品	詢價(jià)

更多IPB60R280C6供應(yīng)商更新時(shí)間2024-12-22 16:12:00

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