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IPI600N25N3G

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3G

OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI600N25N3G

OptiMOS3 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD600N25N3

N-ChannelMOSFETTransistor

?DESCRITION ?Highfrequencyswitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤60m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB600N25N3

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPB600N25N3G

OptiMOSTM3Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Id

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    IPI600N25N3G

  • 制造商：

    Infineon Technologies AG

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-262
8145
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
INFINE0N
23+
TO-262-3
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
英飛凌
21+
PG-TO262-3
6000
絕對原裝現貨
 詢價
Infineon(英飛凌)
2447
PG-TO262-3
115000
500個/管一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期
 詢價
Infineon/英飛凌
21+
PG-TO262-3
6000
原裝現貨正品
 詢價
Infineon/英飛凌
2021+
PG-TO262-3
9600
原裝現貨，歡迎詢價
 詢價
Infineon/英飛凌
24+
PG-TO262-3
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
2023+
PG-TO262-3
6000
全新原裝深圳倉庫現貨有單必成
 詢價
Infineon/英飛凌
21+
PG-TO262-3
6820
只做原裝,質量保證
 詢價
Infineon/英飛凌
21+
PG-TO262-3
13880
公司只售原裝,支持實單
 詢價
更多IPI600N25N3G供應商 更新時間2025-2-26 15:14:00

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