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首頁 >IDT70T633S10BCGI>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
70T633S10BC	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFG	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT70T633S10BC	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10BCI	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10BF	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10BFI	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10DD	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT

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詳細(xì)參數(shù)

型號(hào)：
IDT70T633S10BCGI
制造商：
Integrated Device Technology Inc
功能描述：
IC SRAM 9MBIT 10NS 256CABGA

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IDT70T633S10BCGI	IDT	22+	256CABGA	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IDT70T633S10BCGI	IDT	21+	256CABGA	13880	公司只售原裝,支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IDT70T633S10BCGI	IDT	23+	256CABGA	9000	原裝正品，支持實(shí)單	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IDT70T633S10BCI	IDT	23+	256-CABGA(17x17)	1389	專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!	詢價(jià)
深圳市永貝爾科技有限公司	IDT70T633S10BCI	IDT	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳誠思涵科技有限公司	IDT70T633S10BCI	IDT	18+	QFP	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳兆威電子有限公司	IDT70T633S10BCI	IDT	23+	NA	90000	一定原裝正品/香港現(xiàn)貨	詢價(jià)
深圳市澳億芯電子科技有限公司	IDT70T633S10BCI	IDT	0735+	QFP	12	普通	詢價(jià)
深圳市興燦科技有限公司	IDT70T633S10BCI	IDT	24+	256BGA	2917	原裝現(xiàn)貨	詢價(jià)
深圳市富利微電子科技有限公司	IDT70T633S10BCI	IDT	23+	BGA	30000	房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談	詢價(jià)

更多IDT70T633S10BCGI供應(yīng)商更新時(shí)間2024-11-20 15:36:00

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