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首頁 >IDT70T633S10BCGI>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
70T633S10BC	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFG	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

詳細(xì)參數(shù)

型號：
IDT70T633S10BCGI
制造商：
Integrated Device Technology Inc
功能描述：
IC SRAM 9MBIT 10NS 256CABGA

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	IDT70T633S10BCGI	IDT	22+	256CABGA	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IDT70T633S10BCGI	IDT	21+	256CABGA	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IDT70T633S10BCGI	IDT	23+	256CABGA	9000	原裝正品，支持實單	詢價
深圳市毅創(chuàng)騰電子科技有限公司	IDT70T633S10BCI	IDT	23+	256-CABGA(17x17)	1389	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
深圳市永貝爾科技有限公司	IDT70T633S10BCI	IDT	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價
深圳誠思涵科技有限公司	IDT70T633S10BCI	IDT	18+	QFP	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價
深圳兆威電子有限公司	IDT70T633S10BCI	IDT	23+	NA	90000	一定原裝正品/香港現(xiàn)貨	詢價
深圳市澳億芯電子科技有限公司	IDT70T633S10BCI	IDT	0735+	QFP	12	普通	詢價
深圳市興燦科技有限公司	IDT70T633S10BCI	IDT	24+	256BGA	2917	原裝現(xiàn)貨	詢價
深圳市富利微電子科技有限公司	IDT70T633S10BCI	IDT	24+	BGA	30000	房間原裝現(xiàn)貨特價熱賣,有單詳談	詢價

更多IDT70T633S10BCGI供應(yīng)商更新時間2025-3-6 18:41:00

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