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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IDT70T633S10BCI	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BC	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BCGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BCI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFG	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDT Integrated Device Technology, Inc.	IDT
70T633S10BFGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
70T633S10BFI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
IDT70T633S10BC	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10BF	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10BFI	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT
IDT70T633S10DD	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDT Integrated Device Technology, Inc.	IDT

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詳細參數(shù)

型號：
IDT70T633S10BCI
功能描述：
IC SRAM 9MBIT 10NS 256BGA
RoHS：
否
類別：
集成電路(IC) >> 存儲器
系列：
-
標準包裝：
3,000
系列：
- 格式 -
存儲器：
EEPROMs - 串行
存儲器類型：
EEPROM
存儲容量：
8K(1K x 8)
速度：
400kHz
接口：
I²C，2 線串口
電源電壓：
1.7 V ~ 5.5 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
8-SOIC（0.154，3.90mm 寬）
供應(yīng)商設(shè)備封裝：
8-SOIC
包裝：
帶卷(TR)

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市毅創(chuàng)騰電子科技有限公司	IDT70T633S10BCI	IDT	23+	256-CABGA(17x17)	1389	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
深圳市永貝爾科技有限公司	IDT70T633S10BCI	IDT	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳誠思涵科技有限公司	IDT70T633S10BCI	IDT	18+	QFP	85600	保證進口原裝可開17%增值稅發(fā)票	詢價
深圳兆威電子有限公司	IDT70T633S10BCI	IDT	23+	NA	90000	一定原裝正品/香港現(xiàn)貨	詢價
深圳市澳億芯電子科技有限公司	IDT70T633S10BCI	IDT	0735+	QFP	12	普通	詢價
深圳市興燦科技有限公司	IDT70T633S10BCI	IDT	24+	256BGA	2917	原裝現(xiàn)貨	詢價
深圳市富利微電子科技有限公司	IDT70T633S10BCI	IDT	23+	BGA	30000	房間原裝現(xiàn)貨特價熱賣,有單詳談	詢價
深圳市河鋒鑫科技有限公司	IDT70T633S10BCI	IDT	22+	256CABGA	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IDT70T633S10BCI	IDT	21+	256CABGA	13880	公司只售原裝,支持實單	詢價
深圳市盈盛科創(chuàng)科技有限公司	IDT70T633S10BCI	IDT	22+	BGA	6000	進口原裝假一罰十現(xiàn)貨	詢價

更多IDT70T633S10BCI供應(yīng)商更新時間2024-11-20 16:30:00

詳細參數(shù)

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