首頁 >IDT70T651S12BF>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT70T651S12BF | HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | |
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDT Integrated Device Technology, Inc. | IDT |
詳細(xì)參數(shù)
- 型號(hào):
IDT70T651S12BF
- 功能描述:
IC SRAM 9MBIT 12NS 208FBGA
- RoHS:
否
- 類別:
集成電路(IC) >> 存儲(chǔ)器
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
3,000
- 系列:
- 格式 -
- 存儲(chǔ)器:
EEPROMs - 串行
- 存儲(chǔ)器類型:
EEPROM
- 存儲(chǔ)容量:
8K(1K x 8)
- 速度:
400kHz
- 接口:
I²C,2 線串口
- 電源電壓:
1.7 V ~ 5.5 V
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
8-SOIC(0.154,3.90mm 寬)
- 供應(yīng)商設(shè)備封裝:
8-SOIC
- 包裝:
帶卷(TR)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
208-CABGA(15x15) |
71890 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IDT |
22+ |
208CABGA (15x15) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IDT |
21+ |
208CABGA (15x15) |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IDT |
23+ |
208CABGA (15x15) |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
IDT |
18 |
QFP |
200 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) | ||
IDT |
23+ |
QFP |
66800 |
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價(jià) | ||
IDT |
24+ |
208QFP |
2359 |
原裝現(xiàn)貨 |
詢價(jià) | ||
INTEL |
cdip |
3647 |
萊克訊每片來自原廠!價(jià)格超越代理!只做進(jìn)口原裝! |
詢價(jià) | |||
IDT |
21+ |
QFP |
645 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價(jià) |
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